2009/06/15 ver.1 page 1 spn7510 n-channel enhancement mode mosfet description applications the spn7510 is the n-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . z dc/dc converter z load switch z smps secondary side synchronous rectifier features pin configuration( to-220-3l ) part marking ? 100v/30a,r ds(on) = 16m ? @v gs = 10v ? 100v/16a,r ds(on) = 21m ? @v gs = 4.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? to-220-3l package design
2009/06/15 ver.1 page 2 spn7510 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 d drain 3 s source ordering information part number package part marking SPN7510T220TGB to-220-3l spn7510 SPN7510T220TGB : tube ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 100 v gate ?source voltage v gss 20 v t a =25 72 continuous drain current(t j =150 ) t a =70 i d 45 a pulsed drain current i dm 240 a t a =25 130 power dissipation t a =70 p d 3.38 w avalanche energy with single pulse ( tj=25 , l = 0.12mh , i as = 75a , v dd = 80v. ) eas 335 mj operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 2 /w
2009/06/15 ver.1 page 3 spn7510 n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 100 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =100v,v gs =0v 10 zero gate voltage drain current i dss v ds =80v,v gs =0v t j = 150 c 100 ua v gs = 10v,i d =30a 16 drain-source on-resistance r ds(on) v gs = 4.5v,i d =16a 21 m ? forward transconductance gfs v ds =10v,i d =30a 52 s diode forward voltage v sd i s =30a,v gs =0v 1.3 v dynamic total gate charge q g 69 111 gate-source charge q gs 12 gate-drain charge q gd v ds =80v,v gs =4.5v i d = 30a 39 nc input capacitance c iss 5690 9100 output capacitance c oss 540 reverse transfer capacitance c rss v ds =25v gs =0v f=1mhz 605 pf t d(on) 12 turn-on time t r 75 t d(off) 220 turn-off time t f v dd =50v,r l =1.6 ? i d 30a,v gen =10v r g =10 ? 250 ns
2009/06/15 ver.1 page 4 spn7510 n-channel enhancement mode mosfet typical characteristics
2009/06/15 ver.1 page 5 spn7510 n-channel enhancement mode mosfet typical characteristics
2009/06/15 ver.1 page 6 spn7510 n-channel enhancement mode mosfet typical characteristics
2009/06/15 ver.1 page 7 spn7510 n-channel enhancement mode mosfet to-220-3l package outline
2009/06/15 ver.1 page 8 spn7510 n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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